Robertson received his Bachelor of Arts and Doctor of Philosophy[6] degrees from the University of Cambridge. His PhD was awarded in 1975 for research on electronic states in amorphoussemiconductors.[6]
Research and career
Following his PhD, Robertson worked at the Central Electricity Research Laboratories for 18 years,[citation needed] and in 1994 returned to Cambridge. He has published over 600 journal papers with around 33,000 citations.[3] His main topic of research is theory of carbon materials.[7][8][9][10][11] Other research interests include: carbon nanotubes, graphene, chemical vapour deposition, electronic applications (experimental and calculation); modelling of CVD mechanisms; carbon interconnects, carbon conductors, carbon for supercapacitors; high-κ dielectrics for complementary metal oxide semiconductor transistors; high-κ oxides on high mobility substrates such as InGaAs, Ge (modelling); transparent conducting oxides, amorphous oxide semiconductors (AOS) such as indium gallium zinc oxide, their thin film transistors, instability mechanisms (calculations); density functional calculations of semiconductors, oxides, carbon materials, and hybrid density functional calculations for correct band gaps; functional oxides, TiO2.[5][4]
^Robertson, J. (2000). "Band offsets of wide-band-gap oxides and implications for future electronic devices". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18 (3): 1785–1791. Bibcode:2000JVSTB..18.1785R. doi:10.1116/1.591472.